- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,759
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 310 Ohms | 1.4 V | 1 nC | Enhancement | ||||
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14,088
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 310 Ohms | 1.4 V | 1 nC | Enhancement | ||||
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1,891
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 29.5 A | 14.5 mOhms | 1.4 V | 53.7 nC | Enhancement | ||||
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7,939
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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13,147
In-stock
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Fairchild Semiconductor | MOSFET 0.17A, 100V, N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | 1.4 V | 0.793 nC | Enhancement | ||||
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7,725
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.4 V | 1.5 nC | |||||
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9,990
In-stock
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onsemi | MOSFET NFET 30V .56A 1500M | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 500 mA | 1.5 Ohms | 1.4 V | 1.15 nC | |||||
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4,886
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 305 mA | 4 Ohms | 1.4 V | 304 nC | Enhancement | ||||
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6,573
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm | 20 V, 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | ||||
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10
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 98 A | 6.9 mOhms | 1.4 V | 53.7 nC | Enhancement | ||||
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6,610
In-stock
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Texas instruments | MOSFET 40V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 1.7 mOhms | 1.4 V | 150 nC | Enhancement | NexFET | |||
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4,725
In-stock
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Texas instruments | MOSFET 30V N Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.5 mOhms | 1.4 V | 39 nC | NexFET | ||||
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2,257
In-stock
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Texas instruments | MOSFET 30V N-Ch NexFET Power MOSFETs | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.8 mOhms | 1.4 V | 28.5 nC | NexFET | ||||
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1,666
In-stock
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Texas instruments | MOSFET 25V NexFET N Ch Pwr MosFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.4 V | 37 nC | NexFET | ||||
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53,970
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 280mA SOT-323-3 | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 3.5 Ohms | 1.4 V | 1 nC | Enhancement | ||||
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GET PRICE |
48,100
In-stock
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Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.6 mOhms | 1.4 V | 23 nC | NextFET | |||
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3,000
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI |
