- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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193
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||||
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3,000
In-stock
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Nexperia | MOSFET 60V, Dual N-channel Trench MOSFET | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 330 mA, 330 mA | 5.7 Ohms, 5.7 Ohms | 1.1 V, 1.1 V | 1 nC, 1 nC | Enhancement | |||||
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1,633
In-stock
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Texas instruments | MOSFET Sync Buck Power Block II | - 8 V to + 10 V, - 8 V to + 10 V | SMD/SMT | PTAB-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 30 A | 6.4 mOhms, 1.95 mOhms | 1.1 V, 1.1 V | 7.1 nC, 31 nC | Enhancement | NexFET | ||||
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5,935
In-stock
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Toshiba | MOSFET Small-Signal MOSFET 2-in-1 | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 170 mA, 170 mA | 8.1 Ohms, 8.1 Ohms | 1.1 V, 1.1 V | 270 pC, 270 pC | Enhancement | |||||
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5,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET 2in1 ESD Protected | 20 V, 20 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 300 mA, 300 mA | 1.05 Ohms, 1.05 Ohms | 1.1 V, 1.1 V | 390 pC, 390 pC | Enhancement | ||||||
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14,452
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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4,948
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS | ||||
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3,803
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V, 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 30 A, 30 A | 4.6 mOhms, 2.1 mOhms | 1.1 V, 1.1 V | 10 nC, 23 nC | Enhancement | FastIRFet | ||||
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820
In-stock
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IR / Infineon | MOSFET 25V FastIRFET 4x5 POWER BLOCK PKG | 20 V, 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 25 A, 25 A | 4.7 mOhms, 1.8 mOhms | 1.1 V, 1.1 V | 9.7 nC, 23 nC | Enhancement |