- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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193
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | ||||
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14,452
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
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4,948
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 29 mOhms, 29 mOhms | 1.1 V, 1.1 V | 17.4 nC, 17.4 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS |
