- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,044
In-stock
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Diodes Incorporated | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 8.5 A, 6.8 A | 28 mOhms, 45 mOhms | 1.1 V | 11.6 nC | Enhancement | ||||
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6,630
In-stock
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Nexperia | MOSFET 60V dual N-channel Trench MOSFET | 20 V, 20 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 260 mA, 260 mA | 5.7 Ohms, 5.7 Ohms | 1.1 V | 1 nC, 1 nC | Enhancement | ||||
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2,690
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K | 8 V | SMD/SMT | U-DFN3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 30 mOhms | 1.1 V | 16 nC | Enhancement | ||||
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2,918
In-stock
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Texas instruments | MOSFET Dual 20V N-CH Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 12 A | 14 mOhms | 1.1 V | 11.7 nC | NexFET | ||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET 0.1A 20V 2-in-1 | SMD/SMT | SOT-353-5 | Reel | 2 Channel | Si | N-Channel | 20 V | 100 mA | 5.2 Ohms | 1.1 V | |||||||||
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5,000
In-stock
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Texas instruments | MOSFET Dual Cool NCh NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 60 A | 5.5 mOhms | 1.1 V | 6.2 nC | NexFET | ||||
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2,990
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W | 8 V | SMD/SMT | W-DFN5020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 9.6 mOhms | 1.1 V | 57.4 nC | Enhancement |
