- Vgs - Gate-Source Voltage :
- Package / Case :
-
- CST3-3 (1)
- CST3C-3 (1)
- DFN1006-3 (1)
- DFN1006B-3 (1)
- DFN1010B-6 (1)
- Picostar-3 (1)
- PowerPAK-SO-8 (1)
- PowerPAK-SO-8L-4 (1)
- SC-59-3 (1)
- SO-8 (2)
- SOP-Advance-8 (3)
- SOT-223-3 (1)
- SOT-23-3 (3)
- SOT-323-3 (3)
- SOT-346-3 (1)
- SOT-353-5 (1)
- SOT-416-3 (1)
- TO-252-3 (4)
- TSDSON-8 (2)
- TSON-Advance-8 (1)
- U-DFN3030-8 (1)
- uDFN-6 (1)
- UDFN6B-6 (1)
- VSON-8 (1)
- VSON-Clip-8 (15)
- VSONP-8 (8)
- W-DFN5020-6 (1)
- WDFN-8 (1)
- WSON-FET-6 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 200 mA (1)
- 0.5 A (1)
- 1.5 A (1)
- 10 A (1)
- 100 A (13)
- 100 mA (1)
- 12 A (1)
- 134 A (1)
- 15 A (1)
- 150 A (1)
- 150 mA (1)
- 170 mA (2)
- 188 A (1)
- 2.6 A (1)
- 200 mA (1)
- 22 A (2)
- 25 A (2)
- 260 mA, 260 mA (1)
- 280 A (1)
- 30 A (1)
- 300 mA (1)
- 330 mA (1)
- 35 A (1)
- 350 mA (2)
- 4.2 A (1)
- 40 A (2)
- 400 mA (3)
- 45.5 A (1)
- 5 A (1)
- 5.2 A (1)
- 60 A (7)
- 66 A (1)
- 8.5 A, 6.8 A (1)
- 9.9 A (1)
- 90 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.0054 Ohms (1)
- 0.022 Ohms (1)
- 1.05 Ohms (2)
- 1.2 mOhms (1)
- 1.45 mOhms (1)
- 1.7 mOhms (3)
- 1.9 mOhms (1)
- 13 mOhms (2)
- 14 mOhms (1)
- 145 mOhms (1)
- 15 mOhms (1)
- 2.1 mOhms (1)
- 2.2 mOhms (2)
- 2.2 Ohms (2)
- 2.6 mOhms (2)
- 2.8 mOhms (1)
- 2.8 Ohms (2)
- 2.9 mOhms (1)
- 23 mOhms (1)
- 24 mOhms (1)
- 28 mOhms, 45 mOhms (1)
- 3 mOhms (1)
- 3 Ohms (1)
- 3.2 Ohms (1)
- 3.5 mOhms (1)
- 3.8 mOhms (1)
- 30 mOhms (1)
- 4 mOhms (1)
- 4.1 Ohms (1)
- 4.2 mOhms (1)
- 4.4 mOhms (1)
- 4.6 mOhms (1)
- 4.7 Ohms (1)
- 5.2 Ohms (1)
- 5.5 mOhms (1)
- 5.7 Ohms, 5.7 Ohms (1)
- 5.8 mOhms (3)
- 500 mOhms (1)
- 6.3 mOhms (1)
- 6.5 mOhms (1)
- 610 uOhms (1)
- 7.9 mOhms (1)
- 8.1 Ohms (1)
- 8.7 mOhms (1)
- 840 uOhms (1)
- 890 mOhms (1)
- 9.6 mOhms (1)
- 9.8 mOhms (2)
- 95 mOhms (1)
- 990 mOhms (1)
- Qg - Gate Charge :
-
- 0.216 nC (1)
- 0.27 nC (1)
- 0.72 nC (1)
- 1 nC (3)
- 1 nC, 1 nC (1)
- 1.4 nC (1)
- 11 nC (1)
- 11.6 nC (1)
- 11.7 nC (1)
- 11.8 nC (1)
- 110 nC (1)
- 12.4 nC (1)
- 13.2 nC (1)
- 14 nC (2)
- 14.1 nC (1)
- 15 nC (1)
- 16 nC (1)
- 18 nC (3)
- 19 nC (1)
- 2 nC (1)
- 22.2 nC (1)
- 25.5 nC (1)
- 28 nC (1)
- 30 nC (1)
- 34 nC (1)
- 35 nC (4)
- 350 pC (2)
- 4.5 nC (1)
- 41 nC (1)
- 430 pC (1)
- 49 nC (3)
- 50 nC (1)
- 53 nC (1)
- 57.4 nC (1)
- 6.2 nC (2)
- 6.8 nC (2)
- 600 pC (2)
- 64 nC (1)
- 68 nC (1)
- 7.5 nC (1)
- 7.9 nC (1)
- 98 nC (2)
- Tradename :
- Applied Filters :
61 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,400
In-stock
|
Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | ||||
|
|
4,847
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | OptiMOS | |||
|
|
26,510
In-stock
|
Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 330 mA | 3.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
|
|
4,472
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 15 mOhms | 1.1 V | 11 nC | |||||
|
|
2,600
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | |||
|
|
4,044
In-stock
|
Diodes Incorporated | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 8.5 A, 6.8 A | 28 mOhms, 45 mOhms | 1.1 V | 11.6 nC | Enhancement | ||||
|
|
4,608
In-stock
|
onsemi | MOSFET NFET WDFN6 30V 1.5A 200mOhm | 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.5 A | 145 mOhms | 1.1 V | 1.4 nC | |||||
|
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6,630
In-stock
|
Nexperia | MOSFET 60V dual N-channel Trench MOSFET | 20 V, 20 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 260 mA, 260 mA | 5.7 Ohms, 5.7 Ohms | 1.1 V | 1 nC, 1 nC | Enhancement | ||||
|
|
2,471
In-stock
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | ||||
|
|
VIEW | Nexperia | MOSFET NX7002BKM/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
|
|
2,690
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K | 8 V | SMD/SMT | U-DFN3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 30 mOhms | 1.1 V | 16 nC | Enhancement | ||||
|
|
11,215
In-stock
|
Nexperia | MOSFET NX7002AK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 1.1 V | 430 pC | Enhancement | ||||
|
|
1,999
In-stock
|
Nexperia | MOSFET 30V 200 MA P-CH TRENCH MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 4.1 Ohms | 1.1 V | 0.72 nC | Enhancement | |||||
|
|
240
In-stock
|
Nexperia | MOSFET NX7002BKMB/XQFN3/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.2 Ohms | 1.1 V | 1 nC | Enhancement | ||||
|
|
4,918
In-stock
|
Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | ||||||
|
|
24,541
In-stock
|
Texas instruments | MOSFET 20-V N-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 0.5 A | 990 mOhms | 1.1 V | 0.216 nC | Enhancement | PicoStar | |||
|
|
3,000
In-stock
|
Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | |||||
|
|
333
In-stock
|
Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | |||||
|
|
4,775
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||||
|
|
50,000
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 5 A | 2.1 mOhms | 1.1 V | 14 nC | Enhancement | NexFET | |||
|
|
2,637
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | |||
|
|
8,840
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | |||
|
|
8,688
In-stock
|
Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement | ||||
|
|
30,000
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.9 mOhms | 1.1 V | 53 nC | Enhancement | NexFET | |||
|
|
8,393
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4.6 mOhms | 1.1 V | 6.8 nC | NexFET | ||||
|
|
1,772
In-stock
|
Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1.1 V | 28 nC | NexFET | ||||
|
|
50,000
In-stock
|
Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2.6 mOhms | 1.1 V | 14 nC | NexFET | ||||
|
|
4,450
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 2.2 mOhms | 1.1 V | 18 nC | NexFET | ||||
|
|
48,990
In-stock
|
Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | |||
|
|
8,064
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 23 mOhms | 1.1 V | 2 nC | NexFET |
