- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,999
In-stock
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Nexperia | MOSFET 30V 200 MA P-CH TRENCH MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 4.1 Ohms | 1.1 V | 0.72 nC | Enhancement | ||||
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2,889
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement | ||||||
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60,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 500 mOhms | 1.1 V | Enhancement |
