- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DirectFET-L8 (1)
- H-PSOF-8 (5)
- H2PAK-2 (2)
- H2PAK-6 (1)
- Power-56-8 (2)
- PowerDI3333-8 (3)
- POWERDI5060-8 (1)
- PowerPAK-SO-8 (1)
- PQFN-8 (1)
- SO-FL-8 (2)
- SOT-23-3 (1)
- SOT-323-3 (2)
- SOT-523-3 (1)
- TDSON-8 (4)
- TO-220-3 (11)
- TO-220FP-3 (4)
- TO-247-3 (2)
- TO-252-3 (10)
- TO-263-3 (17)
- TO-263-7 (6)
- VSONP-8 (2)
- X1-DFN1006-3 (1)
- Maximum Operating Temperature :
- Packaging :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.0014 Ohms (1)
- 1.1 mOhms (1)
- 1.2 mOhms (2)
- 1.3 mOhms (4)
- 1.6 mOhms (2)
- 10.8 mOhms (2)
- 104 mOhms (1)
- 11.3 mOhms (1)
- 11.5 mOhms (1)
- 14 mOhms (1)
- 16 mOhms (1)
- 2.2 mOhms (2)
- 2.3 mOhms (4)
- 2.8 mOhms (1)
- 2.9 mOhms (4)
- 3 mOhms (3)
- 3 Ohms (3)
- 3.1 mOhms (6)
- 3.2 mOhms (2)
- 3.3 mOhms (2)
- 3.5 mOhms (2)
- 37.5 mOhms (1)
- 4 mOhms (3)
- 4.1 mOhms (1)
- 4.4 mOhms (2)
- 4.5 mOhms (1)
- 4.6 mOhms (2)
- 4.7 mOhms (3)
- 5 mOhms (2)
- 5.6 mOhms (3)
- 5.7 mOhms (4)
- 6 mOhms (1)
- 6 Ohms (2)
- 6.2 mOhms (2)
- 6.5 mOhms (2)
- 6.6 mOhms (1)
- 7.1 mOhms (1)
- 7.6 mOhms (1)
- 7.8 mOhms (1)
- 7.9 mOhms (1)
- 9 mOhms (2)
- Qg - Gate Charge :
-
- 0.87 nC (1)
- 100 nC (1)
- 102 nC (1)
- 126 nC (1)
- 130 nC (2)
- 136 nC (3)
- 15 nC (2)
- 15.7 nC (1)
- 160 nC (1)
- 165 nC (2)
- 17 nC (1)
- 170 nC (2)
- 173 nC (1)
- 183 nC (3)
- 20 nC (1)
- 200 nC (3)
- 22.4 nC (2)
- 270 nC (1)
- 275 nC (4)
- 29 nC (1)
- 30 nC (4)
- 33 nC (2)
- 35 nC (2)
- 352 pC (1)
- 36 nC (1)
- 40 nC (1)
- 41.3 nC (1)
- 42 nC (2)
- 47 nC (3)
- 50 nC (2)
- 52 nC (1)
- 53 nC (1)
- 55 nC (5)
- 56 nC (2)
- 63 nC (1)
- 69 nC (1)
- 80 nC (1)
- 81 nC (1)
- 82 nC (6)
- 95.4 nC (2)
- 98 nC (4)
- Tradename :
82 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
72,000
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 3 mOhm typ 130 A STripFET F7 Power MOS... | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 125 W | N-Channel | 60 V | 130 A | 3.5 mOhms | 2 V | PowerFLAT-5x6-8 | 3000 | Green available | |||||||||||
|
|
GET PRICE |
8,600
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0012 Ohm typ 120 A STripFET F7 Power M... | - 20 V, + 20 V | Tape & Reel (TR) | 187 W | N-Channel | 60 V | 260 A | 1.2 mOhms | 2 V | 100 nC | PowerFLAT-5x6-8 | 3000 | Green available | ||||||||||
|
|
81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||||||
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||||||
|
|
87
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||||||
|
|
3,986
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||||||
|
|
34,821
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | ||||||||
|
|
4,703
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||||||
|
|
8,888
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||||||
|
|
2,543
In-stock
|
Fairchild Semiconductor | MOSFET 60V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.6 mOhms | 2 V | 55 nC | Enhancement | PowerTrench | |||||||
|
|
1,775
In-stock
|
Fairchild Semiconductor | MOSFET 60V 240A TO-LL N-Chnl PowerTrench | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | |||||||
|
|
1,912
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless, MV7, 60V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||||||
|
|
1,974
In-stock
|
Fairchild Semiconductor | MOSFET Update code D | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | |||||||
|
|
1,822
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 289A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 276 A | 1.2 mOhms | 2 V | 52 nC | |||||||||
|
|
4,658
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | |||||||||
|
|
5,909
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3 mOhms | 2 V | 40 nC | Enhancement | ||||||||
|
|
6,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||||||
|
|
3,909
In-stock
|
Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | ||||||||
|
|
900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||||||||
|
|
954
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.3 mOhms | 2 V | 183 nC | Enhancement | ||||||||
|
|
956
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||||||||
|
|
2,495
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | ||||||||
|
|
1,970
In-stock
|
Fairchild Semiconductor | MOSFET 60/20V 90A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 11.3 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||||||
|
|
1,000
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 4.5 mOhms | 2 V | 80 nC | Enhancement | ||||||||
|
|
786
In-stock
|
Fairchild Semiconductor | MOSFET MV7 60V N-channel Standard Gate PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 3.2 mOhms | 2 V | 126 nC | Enhancement | PowerTrench | |||||||
|
|
298
In-stock
|
Fairchild Semiconductor | MOSFET 60V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 3.5 mOhms | 2 V | 173 nC | Enhancement | ||||||||
|
|
2,142
In-stock
|
STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | ||||||||
|
|
1,571
In-stock
|
STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||||||
|
|
659
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | |||||||
|
|
1,128
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS |
