- Vgs - Gate-Source Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
34,821
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | |||||
|
4,703
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | ||||
|
8,888
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | ||||
|
1,822
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 289A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 276 A | 1.2 mOhms | 2 V | 52 nC | ||||||
|
4,658
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | ||||||
|
6,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | ||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | |||||
|
11,192
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 400 mA | 3 Ohms | 2 V | Enhancement | ||||||
|
4,121
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 3 Ohms | 2 V | 0.87 nC | Enhancement | |||||
|
2,709
In-stock
|
Diodes Incorporated | MOSFET NMOS-Single | 20 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | 2 V | Enhancement | ||||||
|
2,828
In-stock
|
Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | 2 V | Enhancement | ||||||
|
6,053
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 2 V | 352 pC | Enhancement | |||||
|
4,000
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 7.8 mOhms | 2 V | 41.3 nC | Enhancement | |||||
|
70
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | ||||
|
4,791
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 5.7 mOhms | 2 V | 15 nC | NexFET | |||||
|
796
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET | ||||
|
3,000
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 92A 4.5MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 89 A | 4.7 mOhms | 2 V | 15.7 nC | ||||||
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8 | +/- 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 0.0014 Ohms | 2 V | 102 nC | Enhancement |