- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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34,821
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | ||||
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690
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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1,563
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 18 mOhms | 2 V | 11.6 nC | Enhancement | ||||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 7.8 mOhms | 2 V | 41.3 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI |
