- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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34,821
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | |||
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3,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 6.5 mOhms | 2 V | 22.4 nC | Enhancement | |||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 7.8 mOhms | 2 V | 41.3 nC | Enhancement |
