- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 1.25 mOhms (1)
- 1.5 mOhms (2)
- 1.7 mOhms (3)
- 1.8 mOhms (3)
- 11 mOhms (1)
- 2 mOhms (2)
- 2.2 mOhms (1)
- 2.5 mOhms (1)
- 2.6 mOhms (2)
- 2.7 mOhms (2)
- 2.8 mOhms (2)
- 3.1 mOhms (1)
- 3.4 mOhms (2)
- 3.5 mOhms (1)
- 3.6 mOhms (1)
- 3.8 mOhms (2)
- 350 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (3)
- 4.4 mOhms (1)
- 4.8 mOhms (1)
- 6.6 mOhms (2)
- 6.9 mOhms (1)
- 690 mOhms (1)
- 7 mOhms (1)
- 970 mOhms (1)
- Qg - Gate Charge :
- Tradename :
40 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,420
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 2 mOhms | 2.2 V | 169 nC | Enhancement | |||||
|
3,950
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 40 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 545 A | 350 mOhms | 2.2 V | 562 nC | Enhancement | |||||
|
6,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||||
|
637
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
|
633
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
|
2,081
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 180A D2PAK-2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2.2 V | 178 nC | Enhancement | |||||
|
1,374
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 2.2 V | 112 nC | Enhancement | |||||
|
1,090
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | |||||
|
649
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | |||||
|
2,015
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 4.4 mOhms | 2.2 V | 69 nC | Enhancement | |||||
|
4,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
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2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
|
372
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 523 A | 690 mOhms | 2.2 V | 305 nC | Enhancement | |||||
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1,852
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | |||||
|
917
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||||
|
349
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.8 mOhms | 2.2 V | 223 nC | Enhancement | |||||
|
579
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | |||||
|
287
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
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1,309
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.6 mOhms | 2.2 V | 42 nC | Enhancement | |||||
|
734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||||
|
395
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.4 mOhms | 2.2 V | 99 nC | Enhancement | |||||
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1,182
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
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1,380
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | ||||
|
648
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.9 mOhms | 2.2 V | 42 nC | Enhancement | |||||
|
1,375
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 7 mOhms | 2.2 V | 13.7 nC | Enhancement | |||||
|
189
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.8 mOhms | 2.2 V | 133 nC | Enhancement | |||||
|
370
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.1 mOhms | 2.2 V | 99 nC | Enhancement | |||||
|
290
In-stock
|
IR / Infineon | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 317 A | 1.25 mOhms | 2.2 V | 324 nC | Enhancement | StrongIRFET | ||||
|
600
In-stock
|
Infineon Technologies | MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 2.2 V | 93 nC | Enhancement | StrongIRFET | ||||
|
1,300
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 116 A | 3.4 mOhms | 2.2 V | 30 nC |