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Vgs - Gate-Source Voltage :
Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB049N08N5ATMA1
1+
$2.000
10+
$1.700
100+
$1.360
500+
$1.190
1000+
$0.982
RFQ
1,309
In-stock
Infineon Technologies MOSFET N-Ch 80V 80A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 80 A 6.6 mOhms 2.2 V 42 nC Enhancement  
IPP052N08N5AKSA1
1+
$2.140
10+
$1.820
100+
$1.460
500+
$1.270
RFQ
648
In-stock
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 80 A 6.9 mOhms 2.2 V 42 nC Enhancement  
IRFI7446GPBF
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RFQ
299,000
In-stock
IR / Infineon MOSFET TRENCH_MOSFETS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 80 A 2.6 mOhms 2.2 V 90 nC Enhancement StrongIRFET
IPP80N06S4L-05
1+
$1.550
10+
$1.240
100+
$0.960
500+
$0.848
RFQ
708
In-stock
Infineon Technologies MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 80 A 4.8 mOhms 2.2 V 83 nC Enhancement OptiMOS
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