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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET | ||||||
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410
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 128 A | 5.8 mOhms | 4 V | 110 nC | ||||||||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 4 V | 110 nC | ||||||||
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174
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 122 A | 5 mOhms | 2 V | 110 nC | Enhancement |