- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.002 Ohms (2)
- 0.0031 Ohms (1)
- 0.0035 Ohms (1)
- 0.0036 Ohms (1)
- 0.0047 Ohms (1)
- 1.4 mOhms (3)
- 10 mOhms (1)
- 11 mOhms (1)
- 110 mOhms (1)
- 12 mOhms (1)
- 13.5 mOhms (1)
- 15 mOhms (2)
- 2 mOhms (2)
- 2.2 mOhms (3)
- 24 mOhms (1)
- 3.1 mOhms (1)
- 3.6 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (2)
- 32 mOhms (1)
- 33 mOhms (1)
- 5 mOhms (1)
- 5.8 mOhms (1)
- 55 mOhms (3)
- 6.5 Ohms (1)
- 6.6 mOhms (1)
- 73 mOhms (1)
- 890 mOhms (1)
- 9.4 mOhms (1)
- Applied Filters :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,139
In-stock
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Fairchild Semiconductor | MOSFET PT7 80V/20V Nch Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 130 A | 2 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
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2,398
In-stock
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Fairchild Semiconductor | MOSFET PT7 60/20v SG, N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 155 A | 1.4 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
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5,610
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 147 A | 3.6 mOhms | 3.7 V | 110 nC | StrongIRFET | ||||
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510
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 72A 14mOhm 110nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 72 A | 110 mOhms | 110 nC | ||||||||
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1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET | |||||
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452
In-stock
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IR / Infineon | MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 110 nC | ||||||||
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1,190
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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470
In-stock
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Vishay Semiconductors | MOSFET 55V 110A 158W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 0.0047 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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424
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 10 mOhms | 3 V | 110 nC | Enhancement | ||||
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6,250
In-stock
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Fairchild Semiconductor | MOSFET PT7 80V/20V Nch Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 2 mOhms | 3.8 V | 110 nC | PowerTrench Power Clip | ||||
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36,200
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 75A 14mOhm 110nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 11 mOhms | 110 nC | ||||||||
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31
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | |||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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182
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 110 nC | ||||||||
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410
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 128 A | 5.8 mOhms | 4 V | 110 nC | |||||||
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32
In-stock
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IXYS | MOSFET 1700V 2A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1700 V | 2 A | 6.5 Ohms | 110 nC | |||||||
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60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | |||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 4 V | 110 nC | |||||||
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174
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 122 A | 5 mOhms | 2 V | 110 nC | Enhancement | ||||
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20
In-stock
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IR / Infineon | MOSFET MOSFT 40V 200A 3.1mOhm 75nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 3.1 mOhms | 2.7 V | 110 nC | |||||||
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8,688
In-stock
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Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement | ||||
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66
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | ||||
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20,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | DTMOSIV | |||||
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2
In-stock
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | Enhancement | ||||
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909
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | |||
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59
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 73 mOhms | 5 V | 110 nC | Enhancement | Polar, HiPerFET | |||
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90
In-stock
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IXYS | MOSFET 96 Amps 150V 0.024 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 96 A | 24 mOhms | 5 V | 110 nC | Enhancement | PolarHT | |||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0035 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0031 Ohms | 1.5 V | 110 nC | Enhancement | ||||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V, 20 V | 100 A, 100 A | 0.002 Ohms | 1.5 V | 110 nC | Enhancement |
