- Manufacture :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,190
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 0.0031 Ohms | 1.5 V | 110 nC | Enhancement | ||||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC |
