- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,139
In-stock
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Fairchild Semiconductor | MOSFET PT7 80V/20V Nch Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 130 A | 2 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
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2,398
In-stock
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Fairchild Semiconductor | MOSFET PT7 60/20v SG, N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 155 A | 1.4 mOhms | 2.5 V | 110 nC | Enhancement | PowerTrench Power Clip | |||
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5,610
In-stock
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IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 147 A | 3.6 mOhms | 3.7 V | 110 nC | StrongIRFET | ||||
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6,250
In-stock
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Fairchild Semiconductor | MOSFET PT7 80V/20V Nch Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 2 mOhms | 3.8 V | 110 nC | PowerTrench Power Clip | ||||
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31
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | |||
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32
In-stock
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IXYS | MOSFET 1700V 2A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1700 V | 2 A | 6.5 Ohms | 110 nC | |||||||
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66
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.7 V | 110 nC | Enhancement | ||||
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20,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | DTMOSIV | |||||
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2
In-stock
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Toshiba | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 2.7 V to 3.7 V | 110 nC | Enhancement | ||||
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59
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 73 mOhms | 5 V | 110 nC | Enhancement | Polar, HiPerFET | |||
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2,611
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 13.5 mOhms | - 2.5 V | 110 nC |
