- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,059
In-stock
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | |||||
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830
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | ||||
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439
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | |||||
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100
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | ||||
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185
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | ||||
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98
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | ||||
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52
In-stock
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | ||||||
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29
In-stock
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IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | |||
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38
In-stock
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | ||||||
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156
In-stock
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Texas instruments | MOSFET 100V 6.4mOhm Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.7 mOhms | 2.7 V | 38 nC | Enhancement | NexFET | |||
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451
In-stock
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Texas instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 6.2 mOhms | 2.6 V | 38 nC | NexFET | ||||
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VIEW | IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | ||||||
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1,002
In-stock
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Toshiba | MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||||
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1
In-stock
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STMicroelectronics | MOSFET N-Ch 850V 0.2Ohm typ 19A Zener-protected | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 19 A | 275 mOhms | 4 V | 38 nC | |||||
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640
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 22mOhms 38nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | Enhancement | |||||
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1
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 1.4 V to 2.3 V | 38 nC | Enhancement |
