MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXTA32N20T	1+ $2.330 10+ $1.980 100+ $1.580 500+ $1.390		PDF RFQ	29 In-stock	IXYS	MOSFET 32 Amps 200V 78 Rds	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	200 V	32 A	78 mOhms	5 V	38 nC	Enhancement	Trench
	CSD19531KCS	1+ $1.900 10+ $1.700 25+ $1.620 100+ $1.370		PDF RFQ	156 In-stock	Texas instruments	MOSFET 100V 6.4mOhm Pwr MOSFET	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	200 A	7.7 mOhms	2.7 V	38 nC	Enhancement	NexFET
	CSD19501KCS	1+ $1.780 10+ $1.600 25+ $1.520 100+ $1.280		PDF RFQ	451 In-stock	Texas instruments	MOSFET 80V N-CH NexFET Pwr MOSFET	20 V	Through Hole	TO-220-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	80 V	100 A	6.2 mOhms	2.6 V	38 nC		NexFET
	IRLR7833PBF	1+ $1.470 10+ $1.260 100+ $0.968 500+ $0.855		PDF RFQ	1 In-stock	IR / Infineon	MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	30 V	140 A	4.5 mOhms	1.4 V to 2.3 V	38 nC	Enhancement

IXTA32N20T

IXTA32N20T

IXYS

MOSFET 32 Amps 200V 78 Rds

Stock : 29

1+: $2.330

10+: $1.980

100+: $1.580

500+: $1.390

CSD19531KCS

CSD19531KCS

Texas instruments

MOSFET 100V 6.4mOhm Pwr MOSFET

Stock : 156

1+: $1.900

10+: $1.700

25+: $1.620

100+: $1.370

CSD19501KCS

CSD19501KCS

Texas instruments

MOSFET 80V N-CH NexFET Pwr MOSFET

Stock : 451

1+: $1.780

10+: $1.600

25+: $1.520

100+: $1.280

IRLR7833PBF

IRLR7833PBF

IR / Infineon

MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC

Stock : 1

1+: $1.470

10+: $1.260

100+: $0.968

500+: $0.855

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