- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
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- Vgs th - Gate-Source Threshold Voltage :
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44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,990
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.0272 Ohms | 1.5 V | 30 nC | Enhancement | ||||
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5,901
In-stock
|
Fairchild Semiconductor | MOSFET 150V/20V N Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 28 A | 14 mOhms | 3.3 V | 30 nC | PowerTrench | ||||
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GET PRICE |
163,580
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 10.2 mOhms | 2.2 V | 30 nC | Enhancement | |||
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25,410
In-stock
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Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | ||||
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
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4,416
In-stock
|
Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||
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5,010
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 30 nC | Enhancement | OptiMOS | |||
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6,581
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.5 mOhms | 30 nC | ||||||||
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GET PRICE |
78,180
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||
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8,972
In-stock
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onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 2.7 mOhms | 1.3 V | 30 nC | Enhancement | ||||
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6,413
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | ||||
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2,625
In-stock
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Fairchild Semiconductor | MOSFET 30V/20A N-Chan PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.8 A | 5 mOhms | 30 nC | PowerTrench SyncFET | |||||
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16,630
In-stock
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Vishay Semiconductors | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.017 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | |||
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3,560
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -3.44A DSO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.44 A | 110 mOhms | - 4 V | 30 nC | Enhancement | SIPMOS | |||
|
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4,044
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
|
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3,830
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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2,043
In-stock
|
onsemi | MOSFET NFET 60V 20A 46MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 37.5 mOhms | 2 V | 30 nC | Enhancement | ||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
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2,395
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | ||||
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328
In-stock
|
Fairchild Semiconductor | MOSFET TO263_03, SINGLE, N-CH, 150V, 42MOHM ULTRAFE... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 35 A | 36 mOhms | 3 V | 30 nC | |||||
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2,462
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | |||
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2,339
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | |||
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1,188
In-stock
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onsemi | MOSFET POWER MOSFET 30V 117A 4 M | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19.6 A | 5.5 mOhms | 30 nC | ||||||
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GET PRICE |
13,930
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2 | - 16 V, + 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 6.2 mOhms | 1.2 V | 30 nC | Enhancement | |||
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1,485
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 46A 6.95M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 3.4 mOhms | 2.2 V | 30 nC | |||||
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1,300
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 116 A | 3.4 mOhms | 2.2 V | 30 nC | |||||
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115
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 35 A | 25 mOhms | - 2.5 V | 30 nC | Enhancement | ||||
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27,280
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | |||
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4,132
In-stock
|
Vishay Semiconductors | MOSFET 60V 24A 45W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 24 A | 0.019 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | |||
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|
3,000
In-stock
|
Fairchild Semiconductor | MOSFET 100V/20V N-Channel PTNG MOSFET | +/- 20 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 57 A | 6.4 mOhms | 2 V | 30 nC | Enhancement |
