- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DFN2020MD-6 (3)
- DualCool-56-8 (1)
- MicroFET-6 (1)
- Power-33-8 (1)
- Power-56-8 (2)
- Power33-8 (1)
- PowerPAK-SO-8L (1)
- PowerPAK-SO-8L-4 (2)
- PQFN-8 (1)
- SO-8 (6)
- SO-FL-8 (5)
- TDSON-8 (4)
- TO-220-3 (8)
- TO-220FP-3 (2)
- TO-251-3 (1)
- TO-252-3 (10)
- TO-263-3 (2)
- TO-263-7 (1)
- TO-281-3 (1)
- TSDSON-8 (6)
- TSON-Advance-8 (1)
- VSON-Clip-8 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.3 A (1)
- - 3.44 A (2)
- - 35 A (1)
- - 39.6 A (4)
- - 5 A (1)
- - 7.8 A (1)
- - 8.8 A (1)
- 10 A (3)
- 10.2 A (1)
- 100 A (4)
- 116 A (1)
- 12 A (2)
- 127 A (1)
- 14.8 A (1)
- 15.8 A (1)
- 19.6 A (1)
- 20 A (1)
- 21 A (1)
- 23 A (1)
- 24 A (2)
- 25 A (1)
- 26 A (1)
- 28 A (1)
- 35 A (2)
- 36 A (1)
- 40 A (2)
- 44 A (1)
- 46 A (1)
- 49 A (1)
- 50 A (7)
- 57 A (1)
- 60 A (1)
- 7 A (1)
- 71 A (2)
- 73 A (1)
- 77 A (2)
- 78 A (2)
- 80 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.017 Ohms (1)
- 0.019 Ohms (1)
- 0.0272 Ohms (1)
- 1.45 mOhms (1)
- 1.9 mOhms (1)
- 10.2 mOhms (1)
- 11 mOhms (2)
- 11.2 mOhms (2)
- 110 mOhms (3)
- 13 mOhms (1)
- 13.5 mOhms (4)
- 14 mOhms (1)
- 16 mOhms (1)
- 160 mOhms (1)
- 19 mOhms (1)
- 2.1 mOhms (1)
- 2.3 mOhms (1)
- 2.7 mOhms (1)
- 20 mOhms (2)
- 22 mOhms (1)
- 24 mOhms (1)
- 25 mOhms (1)
- 28 mOhms (1)
- 3.4 mOhms (2)
- 330 mOhms (1)
- 36 mOhms (1)
- 37.5 mOhms (1)
- 4.5 mOhms (1)
- 4.8 mOhms (4)
- 410 mOhms (1)
- 45 mOhms (1)
- 450 mOhms (1)
- 5 mOhms (2)
- 5.4 mOhms (1)
- 5.5 mOhms (1)
- 5.6 mOhms (3)
- 6.2 mOhms (1)
- 6.4 mOhms (1)
- 6.8 mOhms (1)
- 600 mOhms (1)
- 7.3 mOhms (1)
- 82 mOhms (1)
- 9 mOhms (2)
- 9.6 mOhms (1)
- 90 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
61 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,990
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 23 A | 0.0272 Ohms | 1.5 V | 30 nC | Enhancement | |||||
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5,901
In-stock
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Fairchild Semiconductor | MOSFET 150V/20V N Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 28 A | 14 mOhms | 3.3 V | 30 nC | PowerTrench | |||||
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GET PRICE |
163,580
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 10.2 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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25,410
In-stock
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Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | |||||
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7,868
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | ||||||
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4,416
In-stock
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Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | |||||
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4,624
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | |||||
|
5,010
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 30 nC | Enhancement | OptiMOS | ||||
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6,581
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.5 mOhms | 30 nC | |||||||||
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GET PRICE |
78,180
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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8,972
In-stock
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onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 2.7 mOhms | 1.3 V | 30 nC | Enhancement | |||||
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6,413
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | |||||
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2,625
In-stock
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Fairchild Semiconductor | MOSFET 30V/20A N-Chan PowerTrench SyncFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.8 A | 5 mOhms | 30 nC | PowerTrench SyncFET | ||||||
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16,630
In-stock
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Vishay Semiconductors | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.017 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | ||||
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3,560
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -3.44A DSO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.44 A | 110 mOhms | - 4 V | 30 nC | Enhancement | SIPMOS | ||||
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1,852
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | |||||
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1,571
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||||
|
4,044
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
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3,830
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||||
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2,043
In-stock
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onsemi | MOSFET NFET 60V 20A 46MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 37.5 mOhms | 2 V | 30 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | |||||
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2,395
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | |||||
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328
In-stock
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Fairchild Semiconductor | MOSFET TO263_03, SINGLE, N-CH, 150V, 42MOHM ULTRAFE... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 35 A | 36 mOhms | 3 V | 30 nC | ||||||
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825
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | |||||
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713
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 46 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||||
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GET PRICE |
29,800
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-0.37ohms FDMesh 10A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 450 mOhms | 4 V | 30 nC | Enhancement | ||||
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2,462
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | ||||
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186
In-stock
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Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 330 mOhms | 3.5 V | 30 nC | Enhancement | |||||
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311
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | |||||
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2,339
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS |