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Vgs - Gate-Source Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF11NM60ND
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RFQ
29,800
In-stock
STMicroelectronics MOSFET N-Ch, 600V-0.37ohms FDMesh 10A 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10 A 450 mOhms 4 V 30 nC Enhancement
FCPF380N60_F152
1+
$2.120
10+
$1.800
100+
$1.440
500+
$1.270
RFQ
186
In-stock
Fairchild Semiconductor MOSFET 650V, 380mOhm SuperFET II MOSFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10.2 A 330 mOhms 3.5 V 30 nC Enhancement
FCPF7N60YDTU
1+
$1.690
10+
$1.440
100+
$1.150
500+
$1.010
RFQ
169
In-stock
Fairchild Semiconductor MOSFET 600V N-Channel SuperFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7 A 600 mOhms 5 V 30 nC Enhancement
TK16E60W,S1VX
1+
$3.910
10+
$3.150
100+
$2.870
250+
$2.590
RFQ
401
In-stock
Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC 30 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 15.8 A 160 mOhms 2.7 V to 3.7 V 30 nC Enhancement
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