- Manufacture :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | ||||
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4,624
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | |||
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6,581
In-stock
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IR / Infineon | MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.5 mOhms | 30 nC |
