- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.4 Ohms (1)
- 1.7 mOhms (1)
- 10 mOhms (1)
- 129 mOhms (1)
- 14.4 mOhms (1)
- 168 mOhms (4)
- 17 mOhms (1)
- 173 mOhms (2)
- 2 mOhms (3)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 25 mOhms (1)
- 3.3 mOhms (2)
- 3.4 mOhms (1)
- 360 mOhms (1)
- 4.2 mOhms (1)
- 45 mOhms (1)
- 540 mOhms (2)
- 55 mOhms (1)
- 58 mOhms (2)
- 594 mOhms (2)
- 600 mOhms (2)
- 7.3 mOhms (2)
- 76 mOhms (1)
- 8.3 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | ||||
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11,702
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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3,890
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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1,030
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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10,792
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | |||||
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6,017
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
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5,907
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | ||||
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6,500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
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4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | ||||
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2,355
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | 23 nC | Enhancement | |||||
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5,060
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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1,602
In-stock
|
Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | ||||
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3,499
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.3 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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2,375
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | ||||
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734
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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2,443
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
|
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2,751
In-stock
|
Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 18 A | 4.2 mOhms | 1.5 V | 23 nC | Enhancement | PowerTrench SyncFET | ||||
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874
In-stock
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Nexperia | MOSFET PMPB10XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 12.9 A | 10 mOhms | 0.65 V | 23 nC | Enhancement | |||||
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739
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 23 nC | CoolMOS | |||||
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21,400
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.1 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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2,960
In-stock
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Nexperia | MOSFET 20V single N-channel Trench MOSFET | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 12.9 A | 25 mOhms | 400 mV | 23 nC | Enhancement | ||||
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2,930
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 4.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 76 mOhms | - 1 V | 23 nC | Enhancement | ||||
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2,500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 8.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 3.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 1.4 Ohms | 3 V | 23 nC | CoolMOS | ||||
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5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 8.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
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GET PRICE |
48,100
In-stock
|
Texas instruments | MOSFET 30V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.6 mOhms | 1.4 V | 23 nC | NextFET | |||
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2,805
In-stock
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Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 594 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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8,600
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 3 V | 23 nC | CoolMOS |
