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Minimum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPA60R400CEXKSA1
1+
$0.970
10+
$0.824
100+
$0.633
500+
$0.559
RFQ
813
In-stock
Infineon Technologies MOSFET N-Ch 600V 10.3A TO220FP-3 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 600 V 10.3 A 400 mOhms 3 V 32 nC   CoolMOS
IXKH20N60C5
1+
$4.900
10+
$4.170
100+
$3.610
250+
$3.430
RFQ
28
In-stock
IXYS MOSFET 20 Amps 600V 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 20 A 180 mOhms 3 V 32 nC Enhancement CoolMOS
TK17E80W,S1X
1+
$4.190
10+
$3.370
100+
$3.070
250+
$2.770
RFQ
378
In-stock
Toshiba MOSFET N-Ch 800V 2050pF 32nC 17A 180W 20 V Through Hole TO-220-3   + 150 C   1 Channel Si N-Channel 800 V 17 A 250 mOhms 3 V 32 nC Enhancement  
TK17A80W,S4X
1+
$3.860
10+
$3.100
100+
$2.820
250+
$2.550
RFQ
543
In-stock
Toshiba MOSFET N-Ch 800V 2050pF 32nC 17A 45W 20 V Through Hole TO-220FP-3   + 150 C Tube 1 Channel Si N-Channel 800 V 17 A 250 mOhms 3 V 32 nC Enhancement  
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