- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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57,069
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | 10 nC | |||||||
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1,480
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | - 0.55 V | 10 nC | ||||
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8,870
In-stock
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Nexperia | MOSFET 12V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.9 A | 55 mOhms | - 900 mV | 10 nC | Enhancement |
