- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 780 mOhms (3)
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- 8 Ohms (1)
- 8.5 mOhms (3)
- 8.9 mOhms (1)
- 9.1 mOhms (1)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
72 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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435
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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488
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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346
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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494
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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325
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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57,069
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | 10 nC | ||||||||
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2,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
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33,632
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 12.5 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V | 11 A | 9.1 mOhms | 1.3 V | 10 nC | |||||
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21,000
In-stock
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Vishay Semiconductors | MOSFET 30V 7.8A 4W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.8 A | 0.028 Ohms | 1.5 V | 10 nC | Enhancement | TrenchFET | |||
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924
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 6 Ohms | 3 V | 10 nC | Enhancement | ||||
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27,320
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | |||||
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3,448
In-stock
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Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
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3,682
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS | |||
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4,883
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement | ||||
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1,448
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | |||||
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3,261
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | |||||
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3,349
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 81A 5.7mOhm 10nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | |||||||||
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1,643
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 65 mOhms | 10 nC | Enhancement | ||||||
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1,216
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | ||||
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3,988
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.2 A | 19.9 mOhms | 1.8 V | 10 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 900 mOhms | 3 V | 10 nC | MDmesh | ||||
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1,480
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | - 0.55 V | 10 nC | |||||
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1,955
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | Enhancement | |||||
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1,832
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | ||||
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1,787
In-stock
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Fairchild Semiconductor | MOSFET Single PT4 Nch 20/8V zener in MLP2x2 | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.5 A | 60 mOhms | 400 mV | 10 nC | Enhancement | ||||
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1,029
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 18A 60mOhm 10nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 18 A | 105 mOhms | 10 nC | ||||||||
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746
In-stock
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Fairchild Semiconductor | MOSFET CFET 3A / 500V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.5 Ohms | 2 V | 10 nC | Enhancement | ||||
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769
In-stock
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Fairchild Semiconductor | MOSFET 600V, N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 3 V to 5 V | 10 nC | UniFET | |||||
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1,972
In-stock
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IR / Infineon | MOSFET MOSFT 150V 1.9A 280mOhm 10nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | ||||||||
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828
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.6 A | 77 mOhms | 1.5 V | 10 nC | Enhancement |
