- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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57,069
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | 10 nC | ||||||||
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3,448
In-stock
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Siliconix / Vishay | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
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1,480
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.3 A | 50 mOhms | - 0.55 V | 10 nC | |||||
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1,774
In-stock
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Nexperia | MOSFET PMV28UNEA/TO-236AB/REEL 7" Q3/ | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.7 A | 24 mOhms | 450 mV | 10 nC | Enhancement | ||||
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2,707
In-stock
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onsemi | MOSFET PFET 30V 1.95A 20MO | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 155 mOhms | - 3 V | 10 nC | Enhancement | ||||
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2,960
In-stock
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Nexperia | MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.9 A | 30 mOhms | 1 V | 10 nC | Enhancement |
