- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Tradename :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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16,503
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | ||||||
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2,043
In-stock
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Fairchild Semiconductor | MOSFET MV5 N Z 100V/20V | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.2 A | 446 mOhms | 1 V | 2.1 nC | Enhancement | PowerTrench | |||||
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4,813
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | ||||||
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6,718
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | ||||||
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1,361
In-stock
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onsemi | MOSFET NCH 0.6A 250V SOT-89 | 10 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 600 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | ||||||
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4,649
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V | 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | |||||||
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2,449
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 mA | 12 Ohms | 2.1 nC | ||||||||
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3,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | ||||||
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GET PRICE |
8,400
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 26 mOhms | 1.3 V | 2.1 nC | NexFET | |||||
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5,700
In-stock
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Texas instruments | MOSFET 30V, N-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 180 mOhms | 700 mV | 2.1 nC | Enhancement | PicoStar | |||||
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520
In-stock
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Texas instruments | MOSFET 30V, N-Channel NexFET Power Mosfet | - 8 V, + 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 42 mOhms | 900 mV | 2.1 nC | Enhancement | NexFET | |||||
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680
In-stock
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Texas instruments | MOSFET 30V, N-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 180 mOhms | 700 mV | 2.1 nC | Enhancement | PicoStar | |||||
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1,204
In-stock
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Texas instruments | MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... | 10 V, 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 24 mOhms | 1.3 V | 2.1 nC | Enhancement | NexFET | ||||
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2,016
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V DRIVE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | ||||||
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8,977
In-stock
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Texas instruments | MOSFET Auto 30-V N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 32 mOhms | 1.3 V | 2.1 nC | NexFET |