- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
16,503
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | |||||
|
2,043
In-stock
|
Fairchild Semiconductor | MOSFET MV5 N Z 100V/20V | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.2 A | 446 mOhms | 1 V | 2.1 nC | Enhancement | PowerTrench | ||||
|
4,813
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | |||||
|
6,718
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion | |||||
|
2,449
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 mA | 12 Ohms | 2.1 nC | |||||||
|
3,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 mA | 280 Ohms | - 2.7 V | 2.1 nC | Depletion |