- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,580
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | ||||
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5,908
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.2 A | 25.6 mOhms | - 1.8 V | 14 nC | Enhancement | ||||
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7,499
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.2 A | 32.5 mOhms | 14 nC | |||||||||
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1,497
In-stock
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IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 24 A | 26 mOhms | 14 nC | Enhancement | |||||
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974
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 54mOhm -2.5V cpbl | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.8 A | 28.1 mOhms | 14 nC | |||||||||
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255
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.8A 17.5mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | Enhancement | |||||
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9,393
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10 mOhms | 2.25 V | 14 nC | |||||||
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1,955
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 17.5mOhms 14nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 9.8 A | 28.1 mOhms | 14 nC | |||||||||
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1,732
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 17.5mOhms 14nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 17.5 mOhms | 14 nC | ||||||||
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354
In-stock
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IR / Infineon | MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 60 A | 8.4 mOhms | 2.55 V | 14 nC | |||||||
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1,634
In-stock
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IR / Infineon | MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 2.25 V | 14 nC | |||||||
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13
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 11.7 mOhms | 14 nC | Enhancement | |||||
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6
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 14 nC | ||||||||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement | ||||
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114
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
