- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DirectFET-SC (1)
- DirectFET-SJ (1)
- Micro-8 (2)
- MicroFET-6 (1)
- PowerDI3333-8 (3)
- PowerPAK-1212-8 (1)
- PQFN-6 (2)
- SO-8 (10)
- SO-FL-8 (1)
- SOIC-8 (2)
- SOT-223-4 (5)
- SOT-26-6 (1)
- SSOT-6 (1)
- TDSON-8 (2)
- TO-220-3 (3)
- TO-220FP-3 (6)
- TO-251-3 (1)
- TO-252-3 (15)
- TO-263-3 (3)
- TSOP-6 (2)
- U-DFN2020-F-6 (1)
- VSON-Clip-8 (2)
- VSONP-8 (2)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.5 A (1)
- - 2.1 A (1)
- - 3.6 A (1)
- - 4 A (1)
- - 7.2 A (1)
- - 9.2 A (2)
- - 9.8 A (4)
- 10 A (2)
- 100 A (1)
- 11 A (1)
- 12 A (1)
- 13 A (1)
- 16 A (2)
- 17 A (1)
- 18 A (2)
- 19 A (1)
- 2.6 A (2)
- 200 A (1)
- 21.7 A (1)
- 22 A (1)
- 24 A (1)
- 24.5 A (1)
- 25 A (3)
- 3.8 A (2)
- 45 A (1)
- 5 A (6)
- 5.1 A (1)
- 5.6 A (1)
- 5.7 A (3)
- 50 A (2)
- 56 A (1)
- 58 A (2)
- 6.5 A (2)
- 6.8 A (2)
- 60 A (1)
- 63 A (1)
- 65 A (1)
- 660 mA (4)
- 7 A (2)
- 7.5 A (1)
- 8 A (3)
- 800 mA (1)
- Rds On - Drain-Source Resistance :
-
- 0.0235 Ohms (1)
- 0.025 Ohms (1)
- 0.032 Ohms (1)
- 1 Ohms (5)
- 1.05 Ohms (1)
- 1.95 Ohms (2)
- 10 mOhms (3)
- 11.7 mOhms (2)
- 12.5 mOhms (1)
- 120 mOhms (1)
- 13 mOhms (3)
- 13.9 mOhms (1)
- 135 mOhms (1)
- 14 mOhms (1)
- 147 mOhms (1)
- 15 mOhms (1)
- 17.5 mOhms (2)
- 18 mOhms (1)
- 2.1 mOhms (1)
- 2.25 Ohms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (1)
- 20.5 Ohms (1)
- 25 mOhms (1)
- 25.6 mOhms (1)
- 26 mOhms (1)
- 28 mOhms (1)
- 28.1 mOhms (2)
- 32.5 mOhms (1)
- 35 mOhms (7)
- 35.5 mOhms (1)
- 4.2 mOhms (2)
- 41 mOhms (1)
- 45 mOhms (1)
- 560 mOhms (1)
- 57.5 mOhms (1)
- 63 mOhms (2)
- 66 mOhms (1)
- 77 mOhms (1)
- 770 mOhms (1)
- 790 mOhms (2)
- 8.4 mOhms (1)
- 8.6 mOhms (1)
- 850 mOhms (2)
- 9.5 mOhms (1)
- 900 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Package :
- Applied Filters :
70 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Forward Transconductance - Min | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
45,200
In-stock
|
ROHM Semiconductor | MOSFET Nch 100V 5A TO-252(DPAK) | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 15 W | N-Channel | 100 V | 5 A | 135 mOhms | 2.5 V | 14 nC | DPAK-3 (TO-252-3) | 2500 | Green available | |||||||||||
|
|
75,500
In-stock
|
Vishay Semiconductors | MOSFET 150V Vds 20V Vgs PowerPAK SO-8L | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channe | 55 W | N-Channel | 150 V | 24.5 A | 35.5 mOhms | 2.5 V | 14 nC | 16 S | PowerPAK-SO-8-4 | 3000 | Green available | ||||||||||
|
|
2,965
In-stock
|
Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | ||||||||
|
|
27,001
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | ||||||||
|
|
5,394
In-stock
|
Fairchild Semiconductor | MOSFET MOSFET; -80V P-Chan PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.1 A | 147 mOhms | 14 nC | PowerTrench | ||||||||||
|
|
4,697
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 18 mOhms | 1.6 V | 14 nC | PowerTrench | ||||||||||
|
|
4,717
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | |||||||||
|
|
6,472
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | ||||||||||
|
|
3,097
In-stock
|
Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET DPAK | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.5 A | 850 mOhms | 14 nC | |||||||||||
|
|
2,673
In-stock
|
Fairchild Semiconductor | MOSFET UniFET2 500V N-chan | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 14 nC | UniFET | |||||||||
|
|
1,668
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.5 A | 1 Ohms | 3 V to 5 V | 14 nC | UniFET FRFET | |||||||||
|
|
5,580
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | |||||||||
|
|
2,261
In-stock
|
STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | ||||||||||
|
|
5,908
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.2 A | 25.6 mOhms | - 1.8 V | 14 nC | Enhancement | |||||||||
|
|
7,499
In-stock
|
IR / Infineon | MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.2 A | 32.5 mOhms | 14 nC | ||||||||||||||
|
|
2,060
In-stock
|
Infineon Technologies | MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 14 nC | StrongIRFET | |||||||||||||
|
|
5,118
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | ||||||||||
|
|
6,383
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | |||||||||
|
|
934
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 850 mOhms | 3 V to 5 V | 14 nC | UniFET | |||||||||
|
|
8,890
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | Si | P-Channel | - 60 V | - 4 A | 77 mOhms | - 1.2 V | 14 nC | Enhancement | |||||||||||
|
|
39,410
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nC | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.1 A | 57.5 mOhms | 4 V | 14 nC | ||||||||||||
|
|
1,568
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 5A 0.84Ohm MDmesh II | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5 A | 900 mOhms | 3 V | 14 nC | ||||||||||
|
|
4,180
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 14 nC | |||||||||||||
|
|
1,787
In-stock
|
STMicroelectronics | MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | |||||||||||
|
|
1,497
In-stock
|
IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 24 A | 26 mOhms | 14 nC | Enhancement | ||||||||||
|
|
3,300
In-stock
|
onsemi | MOSFET NFET DPAK 60V 17A 64MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 66 mOhms | 2.5 V | 14 nC | ||||||||||
|
|
1,726
In-stock
|
STMicroelectronics | MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.6 A | 790 mOhms | 3 V | 14 nC | |||||||||||
|
|
1,599
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 140mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | |||||||||
|
|
1,490
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21.7 A | 2.7 mOhms | 1.3 V | 14 nC | Enhancement | |||||||||
|
|
3,000
In-stock
|
Vishay Semiconductors | MOSFET 20V 8A 18W AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 0.0235 Ohms | 0.45 V | 14 nC | Enhancement | TrenchFET |
