- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,740
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 63 mOhms | 1 V | 14 nC | Enhancement | |||
|
|
VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 63 mOhms | 1 V | 14 nC | Enhancement | |||
|
|
465,000
In-stock
|
Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 7.2 A | 25 mOhms | - 1.8 V | 14 nC | Enhancement |
