- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,229
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 25V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | ||||||||
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2,477
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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1,344
In-stock
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Infineon Technologies | MOSFET 25V DUAL N / P CH 20 VGS MAX V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | Enhancement | |||||
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2,383
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5 A | 3.51 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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477
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 31 mOhms, 31 mOhms | 2.7 V | 9.4 nC | Enhancement | ||||
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480
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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440
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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166
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V | 20 A | 65 mOhms | 9.4 nC | OptiMOS | |||||
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2,803
In-stock
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Toshiba | MOSFET Small-signal MOSFET | 12 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 23.8 mOhms | 500 mV | 9.4 nC | Enhancement | ||||
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6,538
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3 A | 1.5 Ohms | 3 V | 9.4 nC | CoolMOS | ||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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1,394
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | ||||
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1,275
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.1 A | 1.5 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
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37
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS |
