- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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477
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 31 mOhms, 31 mOhms | 2.7 V | 9.4 nC | Enhancement | ||||
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166
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V | 20 A | 65 mOhms | 9.4 nC | OptiMOS |
