- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,351
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 2.4A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | ||||
|
|
81
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS |
