- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 12 A (2)
- - 2.2 A (1)
- - 2.6 A (1)
- - 2.7 A (1)
- - 6.5 A (2)
- 100 A (2)
- 16 A (1)
- 16.5 A (1)
- 18 A (1)
- 19 A (1)
- 2.2 A (1)
- 2.5 A (1)
- 27 A (1)
- 30 A (1)
- 40 A (1)
- 42 A (1)
- 48 A (2)
- 5.4 A (1)
- 5.8 A (1)
- 50 A (1)
- 6 A (1)
- 6.5 A (1)
- 6.6 A (3)
- 60 A (1)
- 7 A (1)
- 7.9 A (2)
- 70 A (1)
- 85 A (1)
- 87 A (1)
- 9.4 A (2)
- 93 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.016 Ohms (1)
- 0.241 Ohms (1)
- 1.05 Ohms (1)
- 1.7 mOhms (1)
- 10 mOhms (1)
- 13.3 mOhms (1)
- 16.1 mOhms (1)
- 2.2 mOhms (1)
- 2.6 mOhms (1)
- 22 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (1)
- 29 mOhms (1)
- 3.1 Ohms (1)
- 30 mOhms (1)
- 31 mOhms (1)
- 35 mOhms (2)
- 380 mOhms (2)
- 4.2 mOhms (1)
- 4.6 mOhms (1)
- 45 mOhms (1)
- 480 mOhms (2)
- 5.7 mOhms (1)
- 50 mOhms (1)
- 6 mOhms (2)
- 6 Ohms (1)
- 6.3 mOhms (1)
- 6.7 mOhms (1)
- 6.8 Ohms (1)
- 60 mOhms (2)
- 7.5 mOhms (2)
- 8.7 mOhms (1)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,981
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.5 A | 9.6 mOhms | 18 nC | Enhancement | PowerTrench | ||||
|
|
7,083
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 31 mOhms | 18 nC | PowerTrench | |||||||
|
|
6,965
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 45 mOhms | 1.2 V | 18 nC | Enhancement | ||||
|
|
4,687
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 16A 6.8mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | ||||||||
|
|
17,310
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.2 A | 0.241 Ohms | - 2.5 V | 18 nC | Enhancement | TrenchFET | |||
|
|
7,178
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | ||||
|
|
5,092
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
|
|
3,322
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | ||||||||
|
|
1,246
In-stock
|
Fairchild Semiconductor | MOSFET P-CH/400V/2.7A/3.1OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 2.7 A | 3.1 Ohms | - 5 V | 18 nC | QFET | ||||
|
|
2,199
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 27 A | 25 mOhms | 3 V | 18 nC | Enhancement | |||||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 9.4A 380mOhm 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
|
|
2,158
In-stock
|
onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
|
|
3,377
In-stock
|
IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
|
|
152,000
In-stock
|
Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
|
|
1,760
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
|
|
419
In-stock
|
STMicroelectronics | MOSFET N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperM... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.2 A | 6.8 Ohms | 3 V to 4.5 V | 18 nC | Enhancement | ||||
|
|
1,869
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 30 mOhms | 0.7 V | 18 nC | |||||
|
|
1,006
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
|
|
1,380
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | |||
|
|
2,741
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | ||||||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.3 mOhms | 18 nC | OptiMOS | |||||
|
|
1,425
In-stock
|
onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
|
|
1,613
In-stock
|
Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement | ||||
|
|
22
In-stock
|
onsemi | MOSFET CHPFT SNGL 30V 8.2A NFET | 20 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 18 nC | Enhancement | |||||
|
|
900
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | ||||
|
|
4,450
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 2.2 mOhms | 1.1 V | 18 nC | NexFET | ||||
|
|
2,033
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 80V 40A 18nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 13.3 mOhms | 4 V | 18 nC | Enhancement | ||||||
|
|
722
In-stock
|
Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.6 mOhms | 1.1 V | 18 nC | NexFET | ||||
|
|
5,000
In-stock
|
STMicroelectronics | MOSFET Hi Vltg NPN Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.5 A | 6 Ohms | 18 nC | Enhancement | |||||
|
|
4,995
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement |
