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63 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,981
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CH PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.5 A | 9.6 mOhms | 18 nC | Enhancement | PowerTrench | |||||
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7,083
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 31 mOhms | 18 nC | PowerTrench | ||||||||
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6,965
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 45 mOhms | 1.2 V | 18 nC | Enhancement | |||||
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4,687
In-stock
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IR / Infineon | MOSFET MOSFT 30V 16A 6.8mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | |||||||||
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17,310
In-stock
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Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.2 A | 0.241 Ohms | - 2.5 V | 18 nC | Enhancement | TrenchFET | ||||
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7,178
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | |||||
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3,246
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | Enhancement | ||||||
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18,060
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 18 nC | Enhancement | |||||
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5,092
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | ||||
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3,322
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | |||||||||
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1,246
In-stock
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Fairchild Semiconductor | MOSFET P-CH/400V/2.7A/3.1OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 2.7 A | 3.1 Ohms | - 5 V | 18 nC | QFET | |||||
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199
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 50 A | 60 mOhms | 4 V | 18 nC | Enhancement | ||||||
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2,199
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 27 A | 25 mOhms | 3 V | 18 nC | Enhancement | ||||||
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1,388
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 200V 9.4A 380mOhm 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | ||||||
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2,158
In-stock
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onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | |||||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | |||||
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152,000
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | ||||||
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1,033
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 18 nC | Enhancement | UniFET | |||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | ||||||
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419
In-stock
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STMicroelectronics | MOSFET N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperM... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.2 A | 6.8 Ohms | 3 V to 4.5 V | 18 nC | Enhancement | |||||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | ||||||
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1,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | ||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | |||||
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1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||||
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1,869
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 30 mOhms | 0.7 V | 18 nC | ||||||
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1,006
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | ||||||
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1,380
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | ||||
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2,741
In-stock
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IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | |||||||||
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329
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.7 mOhms | 18 nC | Enhancement | OptiMOS |