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- Vgs - Gate-Source Voltage :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,388
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||||
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1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||
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8,540
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | ||||||||
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2,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 55V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 0.016 Ohms | 1.5 V | 18 nC | Enhancement | TrenchFET |
