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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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199
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 50 A | 60 mOhms | 4 V | 18 nC | Enhancement | ||||
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333
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | |||
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2,033
In-stock
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Toshiba | MOSFET U-MOSVIII-H 80V 40A 18nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 13.3 mOhms | 4 V | 18 nC | Enhancement | |||||
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4,995
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | |||
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1,998
In-stock
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STMicroelectronics | MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement |
