- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (1)
- 13.3 mOhms (1)
- 16.1 mOhms (1)
- 19.7 mOhms (1)
- 22 mOhms (1)
- 24.5 mOhms (3)
- 25 mOhms (1)
- 250 mOhms (1)
- 3.5 mOhms (2)
- 4.2 mOhms (1)
- 4.6 mOhms (1)
- 480 mOhms (5)
- 5.7 mOhms (2)
- 50 mOhms (1)
- 6 mOhms (2)
- 6.3 mOhms (1)
- 6.7 mOhms (1)
- 60 mOhms (1)
- 7.5 mOhms (2)
- 7.8 mOhms (1)
- 8.7 mOhms (2)
- 85 mOhms (1)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
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34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,981
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CH PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.5 A | 9.6 mOhms | 18 nC | Enhancement | PowerTrench | ||||
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4,687
In-stock
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IR / Infineon | MOSFET MOSFT 30V 16A 6.8mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | ||||||||
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7,178
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 93 A | 5.7 mOhms | 1.55 V to 2.45 V | 18 nC | Enhancement | ||||
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GET PRICE |
18,060
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 18 nC | Enhancement | ||||
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5,092
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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2,199
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 27 A | 25 mOhms | 3 V | 18 nC | Enhancement | |||||
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1,388
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||||
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2,158
In-stock
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onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
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152,000
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
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1,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||
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1,380
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | |||
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2,741
In-stock
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IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | ||||||||
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329
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.7 mOhms | 18 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.3 mOhms | 18 nC | OptiMOS | |||||
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8,540
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | ||||||||
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1,425
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
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1,613
In-stock
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Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement | ||||
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22
In-stock
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onsemi | MOSFET CHPFT SNGL 30V 8.2A NFET | 20 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 18 nC | Enhancement | |||||
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2,033
In-stock
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Toshiba | MOSFET U-MOSVIII-H 80V 40A 18nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 13.3 mOhms | 4 V | 18 nC | Enhancement | ||||||
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2,931
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 480 mOhms | - 4 V | 18 nC | Enhancement | ||||
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30,000
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -6.5A 480mOhm 18nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET DIRECTFET (ST) | 20 V | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 20 V | 18 A | 4.6 mOhms | 18 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 7.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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2,263
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 8.5nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 19.7 mOhms | 18 nC | ||||||||
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1,104
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | Enhancement |
