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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,060
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 18 nC | Enhancement | ||||
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1,033
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 770 mOhms | 5 V | 18 nC | Enhancement | UniFET | ||||
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
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1,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS | |||
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333
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
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1,998
In-stock
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STMicroelectronics | MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.5 mOhms | 1 V | 18 nC | Enhancement | OptiMOS |
