- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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8,540
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | ||||||
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3,000
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 18 nC | Enhancement | |||
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517
In-stock
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IR / Infineon | MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 93 A | 7.8 mOhms | 18 nC | ||||||
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30,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -100V -6.5A 480mOhm 18nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC |
