- Manufacture :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,687
In-stock
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IR / Infineon | MOSFET MOSFT 30V 16A 6.8mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | ||||||||
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3,246
In-stock
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IR / Infineon | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | Enhancement | |||||
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3,322
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL N/PCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | ||||||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
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1,555
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | ||||
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1,869
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 6.6A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 30 mOhms | 0.7 V | 18 nC | |||||
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2,741
In-stock
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IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | ||||||||
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7,907
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -12A 11.9mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 10 mOhms | - 1.8 V | 18 nC | Enhancement | ||||
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2,263
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 8.5nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 19.7 mOhms | 18 nC | ||||||||
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1,104
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.8mOhms 18nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 16 A | 8.7 mOhms | 18 nC | Enhancement | |||||
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2,259
In-stock
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IR / Infineon | MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 60 mOhms | 18 nC | ||||||||
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3
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 11.9mOhms 18nC | 25 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 8.5 mOhms | 18 nC |