MOSFET - Kaimeite

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3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	IRFH5010TRPBF	1+ $1.530 10+ $1.300 100+ $1.040 500+ $0.905 4000+ $0.670		PDF RFQ	6,236 In-stock	IR / Infineon	MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC	20 V	SMD/SMT	PQFN-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	100 A	9 mOhms	2 V to 4 V	65 nC	Enhancement
	IPD12CN10NGATMA1	1+ $1.660 10+ $1.410 100+ $1.130 500+ $0.988 2500+ $0.762		PDF RFQ	1,876 In-stock	Infineon Technologies	MOSFET MV POWER MOS	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	67 A	9.3 mOhms	2 V	65 nC	Enhancement
	SQR70090ELR_GE3	1+ $1.470 10+ $1.180 100+ $0.904 500+ $0.799 2000+ $0.588		PDF RFQ	2,000 In-stock	Vishay Semiconductors	MOSFET 100V Vds 86A Id AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-252-Reverse-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	86 A	7.2 mOhms	1.5 V	65 nC	Enhancement

IRFH5010TRPBF

IRFH5010TRPBF

IR / Infineon

MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC

Stock : 6,236

1+: $1.530

10+: $1.300

100+: $1.040

500+: $0.905

4000+: $0.670

IPD12CN10NGATMA1

IPD12CN10NGATMA1

Infineon Technologies

MOSFET MV POWER MOS

Stock : 1,876

1+: $1.660

10+: $1.410

100+: $1.130

500+: $0.988

2500+: $0.762

SQR70090ELR_GE3

SQR70090ELR_GE3

Vishay Semiconductors

MOSFET 100V Vds 86A Id AEC-Q101 Qualified

Stock : 2,000

1+: $1.470

10+: $1.180

100+: $0.904

500+: $0.799

2000+: $0.588

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