- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,497
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 235 A | 1.1 mOhms | 2.5 V | 65 nC | Enhancement | ||||
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10,000
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 36 A | 3.8 mOhms | 65 nC | Enhancement | |||||||
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2,861
In-stock
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Fairchild Semiconductor | MOSFET PT7 60V/20V Nch PowerTrench Mosfet | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 3.4 mOhms | 65 nC | Enhancement | PowerTrench | ||||
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785
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | ||||
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6,236
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | ||||
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1,015
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | |||||
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1,732
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
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1,876
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | ||||
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2,491
In-stock
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Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | ||||
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552
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 17 A | 5.9 mOhms | 4 V | 65 nC | Enhancement | ||||
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1,286
In-stock
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onsemi | MOSFET T6-D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 235 A | 1.1 mOhms | 2.5 V | 65 nC | Enhancement | ||||
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2,709
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | |||
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1,351
In-stock
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Vishay Semiconductors | MOSFET 40V 60A 55W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 0.0036 Ohms | 1.5 V | 65 nC | Enhancement | TrenchFET | |||
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1,056
In-stock
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IR / Infineon | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 4 V | 65 nC | |||||
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55
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | |||||||
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1,190
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 3.5 V | 65 nC | Enhancement | ||||
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48
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | |||||
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24
In-stock
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Toshiba | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | |||||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 100V Vds 86A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 86 A | 7.2 mOhms | 1.5 V | 65 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV | |||
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VIEW | Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 0.0037 Ohms | 1.5 V | 65 nC | Enhancement | ||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 4 V | 65 nC | Enhancement | ||||
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728
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 2.2 V to 3.9 V | 65 nC | StrongIRFET | ||||
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375
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55m, 43nC Qg | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 31 A | 24 mOhms | 4 V | 65 nC |
