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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,015
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||
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552
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 17 A | 5.9 mOhms | 4 V | 65 nC | Enhancement | |||
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1,056
In-stock
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IR / Infineon | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 4 V | 65 nC | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 4 V | 65 nC | Enhancement | |||
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375
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 55m, 43nC Qg | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 31 A | 24 mOhms | 4 V | 65 nC |
