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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,876
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | ||||
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2,709
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | |||
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1,056
In-stock
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IR / Infineon | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 4 V | 65 nC | |||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | |||||
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728
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 2.2 V to 3.9 V | 65 nC | StrongIRFET |
