- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
9,810
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 290 A | 2 mOhms | 360 nC | |||||||||
|
42
In-stock
|
IXYS | MOSFET 32 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 32 A | 310 mOhms | 6.5 V | 360 nC | Enhancement | Polar, HiPerFET | ||||
|
220
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | |||||
|
27
In-stock
|
IXYS | MOSFET 75 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 75 A | 36 mOhms | 4.5 V | 360 nC | Enhancement | HyperFET | ||||
|
10
In-stock
|
IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | ||||
|
20
In-stock
|
IXYS | MOSFET 45 Amps 800V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 63 mOhms | 3.9 V | 360 nC | Enhancement | CoolMOS |