- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
9,810
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 290 A | 2 mOhms | 360 nC | ||||||||
|
|
220
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | ||||
|
|
27
In-stock
|
IXYS | MOSFET 75 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 75 A | 36 mOhms | 4.5 V | 360 nC | Enhancement | HyperFET |
