- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 970 mOhms (1)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
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- Applied Filters :
157 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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4,900
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 40 V | 159 A | 1.4 mOhms | 2.2 V | 161 nC | Enhancement | StrongIRFET | ||||
|
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933
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | ||||
|
|
100
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | ||||
|
|
13,340
In-stock
|
IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC | 20 V | SMD/SMT | PQFN-18 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 13 A, 28 A | 8.6 mOhms, 3 mOhms | 2.35 V | 8.3 nC, 34 nC | StrongIRFET | ||||
|
|
7,822
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.4 mOhms | 3.7 V | 236 nC | StrongIRFET | ||||
|
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5,263
In-stock
|
IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | |||
|
|
6,009
In-stock
|
IR / Infineon | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 2.2 mOhms | 3 V | 133 nC | StrongIRFET | ||||
|
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2,056
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 60 V | 338 A | 1.4 mOhms | 3.7 V | 354 nC | StrongIRFET | |||||||
|
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5,610
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 147 A | 3.6 mOhms | 3.7 V | 110 nC | StrongIRFET | ||||
|
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GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||
|
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2,375
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
14,250
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
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39,600
In-stock
|
Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | |||
|
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | |||
|
|
1,490
In-stock
|
IR / Infineon | MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET | SMD/SMT | DirectFET-MX | Reel | Si | N-Channel | 40 V | 198 A | 1.1 mOhms | 141 nC | StrongIRFET | |||||||||
|
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2,376
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | StrongIRFET | ||||||
|
|
1,964
In-stock
|
Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 217 A | 1.2 mOhms | 3 V | 123 nC | Enhancement | StrongIRFET | |||
|
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3,557
In-stock
|
IR / Infineon | MOSFET 40V 85A 2.4mOhm 92nC STrongIRFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 159 A | 2.7 mOhms | 3.9 V | 92 nC | Enhancement | StrongIRFET | |||
|
|
1,579
In-stock
|
IR / Infineon | MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 259 A | 1.1 mOhms | 3 V | 129 nC | StrongIRFET | |||||||
|
|
7,239
In-stock
|
Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 6 mOhms | 3.7 V | 73 nC | StrongIRFET | ||||
|
|
2,684
In-stock
|
IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
|
|
1,422
In-stock
|
Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
|
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||
|
|
3,835
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 201 A | 1.4 mOhms | 2.2 V | 70 nC | Enhancement | StrongIRFET | |||
|
|
GET PRICE |
4,483
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 209 A | 2 mOhms | 1 V | 76 nC | Enhancement | StrongIRFET | ||
|
|
3,324
In-stock
|
IR / Infineon | MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 117 A | 3.3 mOhms | 3.9 V | 98 nC | Enhancement | StrongIRFET | |||||
|
|
1,165
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
2,060
In-stock
|
Infineon Technologies | MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC | 20 V | Through Hole | TO-251-3 | Tube | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 14 nC | StrongIRFET | ||||||||
|
|
4,713
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | ||||
|
|
4,660
In-stock
|
Infineon Technologies | MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 4.5 mOhms | 3.7 V | 124 nC | StrongIRFET |
